COLLABORATION IN BASIC SCIENCE AND ENGINEERING (COBASE)

Vladimir Dobrushkin traveled to Belarus during the winter of ‘98-’99. While on this three-week trip, Dobrushkin met with colleagues Oleg Velichki and Nikolai Kvasov of the Physics Department from Belarus State University of Information and Radioelectronics and Valerii Tsurko from the Institute of Mathematics, National Academy of Sciences, Belarus. The objective of this visit was to develop models, numerical methods, and codes for simulation of coupled diffusion of impurity atoms and point defects in the vicinities of interfaces insulator--semiconductor and heterojunctions semiconductor--semiconductor taking into account extremely high values of diffusing species concentrations, extremely high values of local internal stresses, and internal electric field strength. They actively worked on this goal, exchanging information and results. Dobrushkin thinks this project was beneficial because he helped his colleagues to develop a better algorithm for mathematical simulation of diffusing processes in the vacinities of interfaces insulator--semiconductor and heterojunctions semiconductor--semiconductor. This algorithm uses less primitive operations than previous ones and as a result it inherits fewer round-off errors and takes less time for execution with better accuracy. Dobrushkin and colleagues have prepared a paper that is ready for submission and are in the final stages of creating a proposal that will prolong this collaboration.